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| CR04AM-12 Thyristor Low Power Use REJ03G0354-0200 Rev.2.00 Mar.01.2005 Features * IT (AV) : 0.4 A * VDRM : 600 V * IGT : 100 A * Glass Passivation Type Outline PRSS0003EA-A (Package name: TO-92) 2 3 1 3 2 1 1. Cathode 2. Anode 3. Gate Applications Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V Rev.2.00, Mar.01.2005, page 1 of 7 CR04AM-12 Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Symbol IT (RMS) IT (AV) ITSM I2 t PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- Ratings 0.63 0.4 10 0.4 0.5 0.1 6 6 0.3 - 40 to +125 - 40 to +125 0.23 Unit A A A A2s W W V V A C C g Conditions Commercial frequency, sine half wave 180 conduction, Ta = 54C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 1 k. Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-a) Min. -- -- -- -- 0.2 1 -- -- Typ. -- -- -- -- -- -- 1.5 -- Max. 0.5 0.5 1.2 0.8 -- 100Note2 3 150 Unit mA mA V V V A mA C/W Test conditions Tj = 125C, VRRM applied Tj = 125C, VDRM applied, RGK = 1 k Ta = 25C, ITM = 1.2 A, instantaneous value Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Tj = 125C, VD = 1/2 VDRM, RGK = 1 k Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Tj = 25C, VD = 12 V, RGK = 1 k Junction to ambient Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible. Item A B C D E IGT (A) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100 The above values do not include the current flowing through the 1 k resistance between the gate and cathode. 3. IGT, VGT measurement circuit. A1 IGS 3V DC A3 RGK 1 1k Switch IGT A2 2 V1 VGT TUT 6V DC 60 Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1k) Rev.2.00, Mar.01.2005, page 2 of 7 CR04AM-12 Performance Curves Maximum On-State Characteristics 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 0 1 2 3 4 5 10 Rated Surge On-State Current Ta = 25C Surge On-State Current (A) 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) On-State Voltage (V) Conduction Time (Cycles at 60Hz) 102 x 100 (%) Gate Characteristics 7 5 3 2 Gate Trigger Current vs. Junction Temperature 103 7 Typical Example 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -40 -20 0 20 40 60 80 100 120 140 160 Gate Voltage (V) 101 7 5V GT = 0.8V 3 (Tj = 25C) 2 7 5 3 2 7 5 3 2 100 PG(AV) = 0.1W IGT = 100A (Tj = 25C) IFGM = 0.3V 10-1 VGD = 0.2V 10-2 10-2 2 3 5710-12 3 57100 2 3 57101 2 3 57102 2 3 Gate Current (mA) Gate Trigger Current (Tj = tC) Gate Trigger Current (Tj = 25C) VFGM = 6V PGM = 0.5W Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature 1.0 0.9 Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Gate Trigger Voltage (V) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -40 -20 0 20 Distribution Typical Example Transient Thermal Impedance (C/W) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 40 60 80 100 120 Junction Temperature (C) Time (s) Rev.2.00, Mar.01.2005, page 3 of 7 CR04AM-12 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) 160 Maximum Average Power Dissipation (Single-Phase Half Wave) 0.8 Average Power Dissipation (W) Ambient Temperature (C) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 60 120 = 30 90 180 140 120 100 80 60 40 20 0 0 360 Resistive, inductive loads Natural convection 360 Resistive, inductive loads 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 = 30 90 60 120 180 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 Maximum Average Power Dissipation (Single-Phase Full Wave) 0.8 Average Power Dissipation (W) Ambient Temperature (C) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 = 30 90 60 120 180 140 120 100 80 60 40 20 0 0 360 Resistive loads Natural convection 360 Resistive loads 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 = 30 60 90 120 180 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 160 Maximum Average Power Dissipation (Rectangular Wave) 0.8 Average Power Dissipation (W) Ambient Temperature (C) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 90 180 = 30 60 120 270 DC 140 120 100 80 60 40 20 0 360 Resistive, inductive loads Natural convection 360 Resistive, inductive loads 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 = 30 0 60 120 270 90 180 DC 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Average On-State Current (A) Rev.2.00, Mar.01.2005, page 4 of 7 CR04AM-12 Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Gate to Cathode Resistance 120 100 80 60 40 20 x 100 (%) 160 140 120 100 80 60 40 20 Typical Example x 100 (%) Typical Example RGK = 1k 0 -40 -20 0 20 40 60 80 100 120 140 160 Breakover Voltage (RGK = rk) Breakover Voltage (RGK = 1k) Breakover Voltage (Tj = tC) Breakover Voltage (Tj = 25C) Tj = 125C 0 -1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 Junction Temperature (C) Gate to Cathode Resistance (k) x 100 (%) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Holding Current vs. Junction Temperature 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 Typical Example Tj = 125C RGK = 1k Distribution Breakover Voltage (dv/dt = vV/s) Breakover Voltage (dv/dt = 1V/s) Holding Current (mA) Typical Example IGT(25C) = 35A RGK = 1k 10-2 -60 -40 -20 0 20 40 60 80 100 120 140 Rate of Rise of Off-State Voltage (V/s) Junction Temperature (C) Holding Current vs. Gate to Cathode Resistance Holding Current vs. Gate Trigger Current 4.0 x 100 (%) 500 Holding Current (mA) 400 Typical Example IGT(25C) IH(1k) 0.9mA # 1 25A Tj = 25C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Holding Current (RGK = rk) Holding Current (RGK = 1k) 300 200 #1 100 Tj = 25C 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 0 100 2 3 5 7 101 2 3 5 7 102 Gate to Cathode Resistance (k) Gate Trigger Current (A) Rev.2.00, Mar.01.2005, page 5 of 7 CR04AM-12 Turn-On Time vs. Gate Current 102 7 Typical Example 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Turn-Off Time vs. Junction Temperature 40 Turn-On Time (s) Turn-Off Time (s) VD = 100V RL = 47 RGK = 1k Ta = 25C VD = 50V, VR = 50V 35 IT = 2A, RGK = 1k 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Typical Example Distribution Gate Current (mA) Junction Temperature (C) x 100 (%) Repetitive Peak Reverse Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width x 100 (%) 160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 Repetitive Peak Reverse Voltage (Tj = tC) Repetitive Peak Reverse Voltage (Tj = 25C) 104 7 5 3 2 103 7 5 3 2 Gate Trigger Current (tw) Gate Trigger Current (DC) Typical Example IGT(DC) # 1 10A # 2 65A #1 #2 Tj = 25C 101 100 2 3 4 5 7 101 102 7 5 3 2 2 3 4 5 7 102 Junction Temperature (C) Gate Current Pulse Width (s) Rev.2.00, Mar.01.2005, page 6 of 7 CR04AM-12 Package Dimensions JEITA Package Code SC-43A RENESAS Code PRSS0003EA-A Package Name TO-92 MASS[Typ.] 0.23g Unit: mm 5.0Max 4.4 1.25 1.25 Circumscribed circle 0.7 1.1 11.5Min 5.0Max Order Code Lead form Standard packing Quantity Standard order code Standard order code example CR04AM-12 CR04AM-12-A6 CR04AM-12-TB Straight type Vinyl sack 500 Type name Lead form Vinyl sack 500 Type name - Lead forming code Form A8 Taping 2000 Type name - TB Note : Please confirm the specification about the shipping in detail. Rev.2.00, Mar.01.2005, page 7 of 7 3.6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. 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Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 http://www.renesas.com (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0 |
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